Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond

S. Kono, K. Mizuochi, G. Takyo, N. I. Plusnin, T. Aoyama, T. Goto, T. Abukawa, A. Namba, Y. Nishibayashi, T. Imai
2007 e-Journal of Surface Science and Nanotechnology  
The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and photoemission electron microspectroscopy. A hydrogen-terminated boron-doped diamond (001) surface was used as a reference of surface energy band diagram. The electron affinity of the H-terminated
more » ... H-terminated heavily P-doped diamond was determined to be 0.2 ± 0.15 eV, thus close to zero. The electron affinity of the O-terminated highly P-doped diamond was determined to be 0.0 ± 0.15 eV, thus can be negative. However, the surface energy bands for the two highly P-doped samples were found to have large amounts (3 eV) of upward bending toward surface.
doi:10.1380/ejssnt.2007.33 fatcat:gwk4rc4vnjaxfevk3gonernngq