The Band Structure and Electron Density of InSb1-xBixSolid Solutions

J.I. Vyklyuk, V.G. Deibuk
1998 Acta Physica Polonica. A  
A band structure of semiconductor ΙnSb1-xBix substitution solid solution is calculated by the empirical pseudopotenti al method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependences of energy gap are studied. The results are in good agreement with available experimental data. PACS numbers: 68.65.+g Multicomponent alloys are potentially very important materials for building infrared (IR) detectors,
more » ... ed (IR) detectors, low-noise filters of communication systems, laSers with smooth reorganization of a wavelength [1, 2] . At present the CdHgTe alloys are the most available semiconductor materials for manufacturing far-infrared devices (λ > 8 μm). However, the properties of these crystals largely depend on technological process, which is not as perfect as, for example, for AIIIBV compounds. Many unforeseen factors strongly influence the band gap, and the processes of degradation result in instability of the physical and ecological characteristics [3] . The idea of changing the band gap at the expense of voltage, which arises in appropriate superlattices and heterostructures, is the basis of the latter [4] . Both of the two approaches are characterized by strong and weak legs. The experimental study of the InSb-ΙnΒi systems began about 30 years ago in the classical works of Jean-Louis [5] [6] [7] . Technological difficulties of growing an indicated substitutional solid solution have been decelerating its broad practical introduction until recently. However, recent achievements in the given field [8, 9] open new possibilities of constructing the solution and its applications. Increasing interest has been noticed in fundamental properties, such as an electronic band structure, relation of the band *
doi:10.12693/aphyspola.94.611 fatcat:35rtfcqm6rhjbhsr5b72ymj6bu