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The Aharonov–Bohm effect in a side-gated graphene ring
2010
New Journal of Physics
We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence
doi:10.1088/1367-2630/12/4/043054
fatcat:qdp2cbzw5zb77eusg7ccndbokq