The Aharonov–Bohm effect in a side-gated graphene ring

Magdalena Huefner, Françoise Molitor, Arnhild Jacobsen, Alessandro Pioda, Christoph Stampfer, Klaus Ensslin, Thomas Ihn
2010 New Journal of Physics  
We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence
more » ... gth of the order of 1 micrometer at a temperature of 500mK.
doi:10.1088/1367-2630/12/4/043054 fatcat:qdp2cbzw5zb77eusg7ccndbokq