Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

Z. X. Cheng, X. L. Wang, S. X. Dou, K. Ozawa, H. Kimura
2007 Applied Physics Letters  
The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi 3.25 Sm 0.75 V 0.02 T 2.98 O 12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated temperature, and the coercive field decreased at the same time due to the strong domain depinning process at higher temperature. This film shows almost a polarization-fatigue-free character at
more » ... m temperature, but the aggregation and diffusion of the thermally activated long-range oxygen vacancies caused strong domain pinning, and thus a poor fatigue resistance was observed at elevated temperature.
doi:10.1063/1.2743910 fatcat:j2thc6wjezbndcwicw4tyv55di