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Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)
2020
Energies
Preserved Fulltext
The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated
doi:10.3390/en13010187
fatcat:4phcp4d32zbdfeqyaym3onzpdm