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Analysis of Threshold Current for InP/ AlGaInAs Multiple Quantum Well Ring Laser

Sheng Xie, Hao Wang, Jing Guo, Weilian Guo
2014 Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science   unpublished

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Due to the flexible functions and monolithic integration, semiconductor ring laser (SRL) has become a hot topic in the field of photonic and optoelectronic integration. In this paper, a new threshold current expression suitable for the circular SRL with multiple quantum well (MQW) material structure was derived from the oscillation condition of conventional Fabry-Perot cavity. The influences of ring radius, etching depth and waveguide separation on the threshold current were analyzed and
more » ... ally calculated. The calculation results indicated that the total loss of the circular SRL is mainly determined by the ring radius for small-size device. Compared with the shallow-etched devices, the deep-etched SRLs can lase even with smaller radius, and a minimum threshold current of 35mA was obtained for InP/ AlGaInAs MQW circular laser.
doi:10.2991/lemcs-14.2014.18 fatcat:imyqhsemgvcntiun7jqm6jcjvq
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Sheng Xie, Hao Wang, Jing Guo, Weilian Guo. "Analysis of Threshold Current for InP/ AlGaInAs Multiple Quantum Well Ring Laser." Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science (2014)