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Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity
2016
Journal of Nanotechnology
We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (microbolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal
doi:10.1155/2016/5807940
fatcat:yqudeykq2baujkbhpvil4zoqva