The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films

V. G. Deibuk, Chernivtsi National University, 2 Kotsiubynskogo vul., 58012 Chernivtsi,Ukraine
2002 Semiconductor Physics, Quantum Electronics & Optoelectronics  
Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the Ge x Si 1-x , Ge 1x Sn x , Si 1x Sn x , Si 1x C x thin solid films. The results of the classical molecular dynamic simulations are in good agreement with experimental data and other ab-initio calculations. The effect of layer thickness have
more » ... er thickness have great influence on the miscibility gap.
doi:10.15407/spqeo5.03.247 fatcat:uxd663zn5je2bcfq55nmw7gnta