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The spin-FET (spin field effect transistor) is the spintronics device the operation of which is based on unique properties of free electron or hole spin in semiconductors. In the spin-FET, the modulation of channel conductance is achieved by control of spin direction via the spin-orbit interaction. The present article, firstly, critically reviews the main difficulties encountered in realizing the spin-FET. Secondly, using the concept of the spin surface, general spin properties of 2D holes indoi:10.3952/lithjphys.47202 fatcat:q2pk24y545duvnnsrf2ajhuoeu