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Imperfect antireflection coatings in external-cavity mode-locked semiconductor lasers can cause multiple output pulse generation. The incorporation of an intrawaveguide saturable absorber segment into the laser suppresses this problem. Single pulse outputs of less than 2.8 ps and 0.7 pJ of energy are obtained using such devices with both quantum well and bulk active regions.doi:10.1109/68.127204 fatcat:yp3mcdhegfc6jmkvsloct2lj2a