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Intentionally patterned and spatially non-uniform film profiles in chemical vapor deposition processes
2007
Surface & Coatings Technology
Situations where it is desirable to control a chemical vapor deposition reactor to a spatially nonuniform film profile are presented in the context of a planetary reactor system for SiC CVD and a highly controllable reactor system designed for single-wafer combinatorial CVD processing. We focus on reactor designs and operation methods that enable deposition of spatially graded films for combinatorial studies, and on identifying and driving planetary CVD systems to a specific spatially
doi:10.1016/j.surfcoat.2007.04.117
fatcat:ssk62t2zojdtxdj5g3u7m4jldi