Elastostatic fields in an anisotropic substrate due to a buried quantum dot
Journal of Applied Physics
We present an efficient and accurate continuum-mechanics approach for the numerical prediction of displacement, stress, strain, and strain energy density fields in an anisotropic substrate ͑modeled as a half-space͒ due to a buried quantum dot ͑QD͒. Our approach is based on Green's function solution in anisotropic and linearly elastic half-space combined with the Betti's reciprocal theorem. Numerical examples clearly show that the crystalline anisotropy of the III-V semiconductor group has great
... influence on the elastic fields, as compared to the isotropic solution. In particular, it is found that the hydrostatic strain and strain energy density on the surface of anisotropic half-space made of different crystalline materials due to a cubic QD can be substantially different, and therefore, the isotropy approximation neglecting their differences should not be used in general. Furthermore, the hydrostatic strains on the surface of an anisotropic half-space due to a finite-size ͑cubic͒ QD and an equal-intensity point QD at relatively large depth ͑about twice the side length of the cubic QD͒ can still be quite different, in contrast to the corresponding isotropic result. These observations indicate that in modeling and analyzing the mechanical and electronic behaviors of QD semiconductor structures, the effect of crystalline anisotropy should be considered in general.