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The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current of 3.6 A/mm, and record maximum oscillation frequency (f max ) of 233 GHz. The load-pull power sweep at 10 GHz demonstrate a peak power added efficiencydoi:10.1109/jeds.2020.3042050 fatcat:o5xzvj7x2zf65jcct3p7d37rzq