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Insulating titanium oxynitride for visible light photocatalysis
2019
Physical review B
We propose a systematic approach to obtain various forms of insulating titanium oxynitrides Ti_nN_2O_2n-3 and we conduct a detailed study on its n=2 case, Ti_2N_2O. We study the energetics and the electronic structures of Ti_2N_2O and compare these results with those of pristine and nitrogen-doped TiO_2 within the framework of the density-functional theory (DFT) and the GW approximation. We find that Ti_2N_2O is semiconducting with the calculated band-gap of 1.81 eV, which is significantly
doi:10.1103/physrevb.99.075203
fatcat:56jgskcdavddfoylc3frgfz72u