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Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields

B.K. Choi, Yongmin Kim, J.D. Song
2015 Applied Science and Convergence Technology  

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Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-Schrödinger equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well
more » ... has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.
doi:10.5757/asct.2015.24.5.156 fatcat:dmlph7zh3ve5jk7j7fexsip7qa
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B.K. Choi, Yongmin Kim, J.D. Song. "Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields." Applied Science and Convergence Technology 24.5 (2015) 156-161