The a-Si:H Growth Mechanism: Temperature Study of the SiH3 Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth
Materials Research Society Symposium Proceedings
AbstractWe report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450°C) using the time-resolved cavity ringdown technique. The silicon hydrides –SiHx on the a-Si:H surface during deposition have been studied by the
... died by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from –SiH3 to =SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.