A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2-4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2-4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 • C) and exhibit good insulating

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... rties (leakage current density of ≈10 −8 -10 −7 A·cm −2 at 1 MV·cm −1 ). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p-and n-channel organic semiconductors with mobility as high as 0.15 cm 2 ·V −1 ·s −1 and an I on /I off of >10 5 . Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates.