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A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors
A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2-4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2-4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 • C) and exhibit good insulatingdoi:10.3390/coatings8070236 fatcat:6va4iqmrgjatbir2jxpwkobq3m