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Narrow-line light emission from porous silicon multilayers and microcavities
2002
Semiconductor Science and Technology
Porous silicon multilayers and microcavities, prepared by the pulsed electrochemical etching method, exhibit a variety of reflectivity and photoluminescence spectra. A comparison of the measured results with those calculated based on the transfer matrix method and quantum-box model reveals that the variation of the spectra can be attributed to the change in wavelength position of the stop-band of distributed Bragg reflectors and the maximum of the broad light emission of porous silicon.
doi:10.1088/0268-1242/17/9/318
fatcat:fqangg3eerfrzc2paagsvwou2a