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Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs 2 CO 3 ) and molybdenum trioxide (MoO 3 ), respectively. Cs 2 CO 3 is found to strongly electron dope black phosphorus. The electron mobility of blackdoi:10.1038/ncomms7485 pmid:25761440 fatcat:ggf5d6vbebcitp73hdjgjftsmq