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Improvement of Electrolessly Gap-Filled Cu Using 2,2[sup ʹ]-Dipyridyl and Bis-(3-sulfopropyl)-disulfide (SPS)
2005
Electrochemical and solid-state letters
The use of bis͑3-sulfopropyl͒ disulfide ͑SPS͒ in Cu electroless deposition resulted in Cu bottom-up filling. However, the high accelerating effect of SPS led to a poor electrical property of the film and generated many voids in the film by increasing the surface roughness and causing unstable deposition behavior. The addition of 2,2Ј-dipyridyl together with SPS substantially improved the film quality of the gap-filled Cu maintaining the bottom-up filling behavior. It lowered the film
doi:10.1149/1.1943551
fatcat:ntczfakgezcpdgv4wprfsaz35q