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Here we present the characterization of dielectric -semiconductor interfaces using optical second harmonic generation (SHG). The technique is contactless, which makes it useful for non-destructive monitoring of ultra-thin dielectrics. The generated second harmonic is sensitive to material parameters and charges near interfaces. The signal exhibits time dependence due to charging of traps with carriers generated by the incident laser during the measurement. Quantitative models are applied to thedoi:10.1149/07202.0139ecst fatcat:sgwafz6objam5m7fc4y2pvgxwi