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Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism

Iriya Muneta, Hiroshi Terada, Shinobu Ohya, Masaaki Tanaka
2013 Applied Physics Letters  

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2012 pre-print arXiv:1208.0575v1 fatcat:nz4lwh73jrabxkfnvda4l7e244

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2013 accepted
arXiv:1208.0575v2 fatcat:n45bgkqnorespilgqk2oep3zfi
We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from ~0.01 to 3.2%. The Fermi level of Ga1-xMnxAs exists in the band gap in the whole x region. The Fermi level is closest to the valence band (VB) at x=1.0% corresponding to the onset of ferromagnetism near the metal-insulator transition (MIT), but it moves away from the VB as x increasing or decreasing from 1.0%. This anomalous behavior of the
more » ... level indicates that the ferromagnetism and MIT emerge in the Mn-derived impurity band.
doi:10.1063/1.4816133 fatcat:ydnelmulpfe23c3vygaifkr7c4
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Iriya Muneta, Hiroshi Terada, Shinobu Ohya, Masaaki Tanaka. "Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism." Applied Physics Letters 103.3 (2013) 032411