Simulation Study of Overcurrent Turn-off Capability in 4500V IGBT

Yaohua Wang, Rui Jin, Ge Zhao, Mingchao Gao, Li Li, Lei Cui, Guoqing Leng, Yansong Wang
2018 MATEC Web of Conferences  
According to the requirement of IGBT's over-current turn-off capability, this paper analyzes the factors affecting the dynamic latch-up of IGBT chip during the over-current turn-off process, including the gate width of IGBT cell, the doping concentration of back P + collector and the dVce/dt when the IGBT is turned off. The simulation results show that the anti-dynamic latch-up capability of IGBT can be effectively improved by decreasing the gate width and back P + collector doping
more » ... . Through multi-cell parallel simulation, it is found that current concentration exists in the process of overcurrent trun-off, which leads to the further increase of the lattice temperature, and the overcurrent turn-off capability declines.
doi:10.1051/matecconf/201823204058 fatcat:ykx5muulyzhk7eilj6timvrjam