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According to the requirement of IGBT's over-current turn-off capability, this paper analyzes the factors affecting the dynamic latch-up of IGBT chip during the over-current turn-off process, including the gate width of IGBT cell, the doping concentration of back P + collector and the dVce/dt when the IGBT is turned off. The simulation results show that the anti-dynamic latch-up capability of IGBT can be effectively improved by decreasing the gate width and back P + collector dopingdoi:10.1051/matecconf/201823204058 fatcat:ykx5muulyzhk7eilj6timvrjam