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Analysis of Barrier Parameters on the Extended Threshold Wavelength of Infrared Detectors
IEEE Photonics Technology Letters
The threshold wavelength ( t ) of spectral photoresponse of any semiconductor photodetector is determined by the minimum energy gap (∆ = 1.24/ t ) of the material, or the interfacial energy gap of the heterostructure. It was shown before that the threshold limit can be extended beyond t to obtain an extended threshold wavelength eff ( eff >> t ) in detectors with a barrier energy offset ( E v ) and a gradient. Here, in this letter, we analyze the effect of barrier parameters such as E v anddoi:10.1109/lpt.2018.2860631 fatcat:4pgcn2v56nebpon42tglo647wa