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Fine electronic structure of the buckled dimers of Si(100) elucidated by atomically resolved scanning tunneling spectroscopy and bias-dependent imaging
2001
Physical Review B (Condensed Matter)
We have combined spatially resolved scanning tunneling spectroscopy ͑STS͒ measurements with biasdependent scanning tunneling microscope imaging of the buckled dimers of Si͑100͒, both carried out at an unprecedented spatial resolution. By combing both aspects, in a very unambiguous way, we can elucidate the detail of the electronic structure of the Si͑100͒ surface that has not been addressed or has been misunderstood before. Our measurements clearly show that the third peak ͑located at ϳϩ1.5 V͒
doi:10.1103/physrevb.64.235310
fatcat:4oe4y2jynnc5dbg3czikdwfffq