A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is
It is well known that the recombination of excess carriers at semiconductor surfaces can be substantially reduced by electrostatic charge. The ability to incorporate large charge densities in dielectric films, and to vary the charge density through adjustment of deposition parameters or post deposition treatments, raises an important practical question: how much charge is enough for optimum passivation? We attempt to answer this question through direct measurement of the emitter saturationdoi:10.4229/24theupvsec2009-1cv.4.37 fatcat:ms47d55ihjhslm2xjhkf5dhgli