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Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors
IEEE/OSA Journal of Display Technology
In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N O and O treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged. Index Terms-Amorphous Indium-Gallium-Zinc Oxide thin film transistor (a-IGZO TFT), electrostatic discharge (ESD).doi:10.1109/jdt.2013.2257680 fatcat:4lqjxqsk2bb4bnh3euxwuxki5e