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In this paper, preparation and characterization of a-SiN x thin films deposited by LPCVD method from free radicals of TCS and NH 3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al 2 O 3 catalyst at the temperature of 600 C. Kinetics of this process was investigated at different total pressures, NH 3 /TCS flow rate ratios and temperatures. Surface topography and chemical concentrations were studied by Ellipsometry, XXPS,fatcat:rqs4nem4sfewpghbrapbv5kada