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VLSI design (Print)
Atomic-scale material model capable of melting, crystallization and amorphization has been developed to examine the defect formation and crystal growth processes from melted silicon (Si) based on the ordinary Langevin equations of motion. The developed computer system consists of simulation and visualization part. Simulation supports the large-scale molecular-dynamics (MD) clusters with solid/liquid interface responding interactively to the control parameters such as the temperature gradientdoi:10.1155/2001/95706 fatcat:btcdc6k4qnb7xaqo6naevfznhe