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Chinese Optics Letters (COL)
Nitridated β-Ga2O3 (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of β-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 • C, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.doi:10.3788/col20080604.0282 fatcat:blr7ap77pzfevnk5fm74evld2a