Study on nitridation processes of \beta-Ga2O3 single crystal
β-Ga2O3 单晶NH3中氮化的研究

李星 李星, Xing Li Xing Li, 夏长泰 夏长泰, Changtai Xia Changtai Xia, 何肖丽 何肖丽, Xiaoli He Xiaoli He, Guangqing Pei Guangqing Pei, 裴广庆 裴广庆, Jungang Zhang Jungang Zhang, 张俊刚 张俊刚, Jun Xu Jun Xu
2008 Chinese Optics Letters (COL)  
Nitridated β-Ga2O3 (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of β-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 • C, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.
doi:10.3788/col20080604.0282 fatcat:blr7ap77pzfevnk5fm74evld2a