185 GHz monolithic amplifier in InGaAs-InAlAs transferred-substrate HBT technology

M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M.J.W. Rodwell
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)  
We report a single-stage tuned amplifier that exhibits a peak small signal gain of 3.0 dB at 185 GHz. To the best of our knowledge, this is the first reported HBT result for a tuned amplifier at this frequency, and the gain-per-stage compares favorably with results from HEMT technologies. The amplifier was designed in a transferred-substrate HBT technology that has exhibited record values of extrapolated f max ( >1 THz).
doi:10.1109/mwsym.2001.967236 fatcat:ekyhtg32nrafljtyr5vkgoyyle