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Growth Characteristics of GaAs and InAs Nanowhiskers
Growth characteristics of GaAs and InAs nanowhiskers formed by using the vapor-liquid-solid growth method during metal organic vapor-phase epitaxy are reviewed. The nanowhiskers grown along the <111>B crystallographic orientation were as thin as 10-500 nanometers and up to 5 micrometers long. The width of grown nanowhiskers was dependent on the growth temperature and the thickness of Au deposit used as a growth catalyst. The minimum width of the nanowhiskers was estimated to be about severaldoi:10.1380/jsssj.29.736 fatcat:jcecq6jtc5avzd7dydp67adhbq