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We report the quantitative and direct determination of hole intersubband relaxation times in a voltage biased SiGe heterostructure using density matrix calculations applied to a four-level system in order to interpret photocurrent (PC) pump-pump experiments. One consistent set of parameters allows the simulation of two kinds of experiments, namely pump-pump photocurrent experiments at a free electron laser (wavelength 7.9 µm) and the laser-power dependence of the PC signal. This stronglydoi:10.1088/1367-2630/9/5/128 fatcat:hu2o2fplmbes5kae3avd2jlhdu