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We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF, and HCl, diluted in DMF based solutions. The mixture of H2SO4with DMF showed the best porous structures in comparison to other acids. The concentration of the DMF solution was then varied for a fixed concentration of H2SO4. It was apparent that the different concentration of the DMF solvent gave different types of morphology of the porous GaAs. Furthermore, a higher current density improved the uniformitydoi:10.1155/2014/294385 fatcat:r3bxksxf5fdepnwjvtq6rsybaq