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In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n 2 of 1.4·10 −18 m 2 /W (5 times higher than stoichiometric silicon nitride) and a refractive indexdoi:10.1364/oe.23.025827 pmid:26480096 fatcat:a4c2qjs7urbgzfyg27fwrbxwam