A Sige High Gain And Highly Linear F-Band Single-Balanced Subharmonic Mixer

Neda Seyedhosseinzadeh, Abdolreza Nabavi, Sona Carpenter, Zhongxia Simon He, Mingquan Bao, Herbert Zirath
2017 Zenodo  
A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. The
more » ... er than 60 dB. The mixer shows an input 1-dB compression point of -16 dBm consuming a dc power of only 40 mW. The chip dimension is 0.4 mm2, including probing pads. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors' knowledge, is the highest obtained among active mixers operating above 100 GHz
doi:10.5281/zenodo.1041333 fatcat:lgfrwoamqbf4ti32kaw4ea3qru