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Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study
Semiconductor Physics, Quantum Electronics & Optoelectronics
Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In 0.3 Ga 0.7 As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing (RTA) at temperatures (T ann ) from 550 to 850 °C for 30 s. It has been shown that the spatial arrangement of QWRs (lateral and vertical) causes the quasi-periodical strain distribution, the strains being essentially anisotropic relatively todoi:10.15407/spqeo8.01.036 fatcat:ahbe4evaezcntovgarvwthjmgu