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EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON
Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C. Nickel films of about 60 nm thickness were deposited by magnetron sputtering onto the silicon substrates having a resistivity of 0.58 to 0.53 Ohms×cm. The rapid thermal treatment was carried out in the range of 200 to 550 °C under heat balance mode by irradiatingdoi:10.35596/1729-7648-2020-18-1-81-88 fatcat:65asoapd4rfsdpax6ldic2my4q