Photoluminescence characterization of Er‐implanted Al2O3films

G. N. van den Hoven, E. Snoeks, A. Polman, J. W. M. van Uffelen, Y. S. Oei, M. K. Smit
1993 Applied Physics Letters  
Hoven, van den, G.N.; Snoeks, E.; Polman, A.; Uffelen, van, J.W.M.; Oei, Y.S.; Smit, M.K. A1,03 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photohnninescence spectra centered at il= 1.533 pm, corresponding to intra-4f transitions in Er3+. At an Er pea k concentration of 0.23 at. %, post-implantation thermal annealing up to 950 "C increases the photoluminescence intensity by a factor
more » ... This is a result of defect annealing, which increases the luminescence lifetime from 1 to 7 ms, as well as an increase in the Er3+ active fraction. High Er concentrations are achieved with only moderate concentration quenching effects.
doi:10.1063/1.109136 fatcat:e3pef2rq2zfi3kcxb2y2c3lc7q