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Photoluminescence characterization of Er‐implanted Al2O3films
1993
Applied Physics Letters
Hoven, van den, G.N.; Snoeks, E.; Polman, A.; Uffelen, van, J.W.M.; Oei, Y.S.; Smit, M.K. A1,03 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photohnninescence spectra centered at il= 1.533 pm, corresponding to intra-4f transitions in Er3+. At an Er pea k concentration of 0.23 at. %, post-implantation thermal annealing up to 950 "C increases the photoluminescence intensity by a factor
doi:10.1063/1.109136
fatcat:e3pef2rq2zfi3kcxb2y2c3lc7q