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Strained-silicon (Si) is incorporated into a leading edge 90-nm logic technology . Strained-Si increases saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10 and 25%, respectively. The process flow consists of selective epitaxial Si 1 Ge in the source/drain regions to create longitudinal uniaxial compressive strain in the p-type MOSEFT. A tensile Si nitride-capping layer is used to introduce tensile uniaxial strain into the n-typedoi:10.1109/led.2004.825195 fatcat:7qej3ehzebae7eafb6kqrrctni