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Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
2016
Applied Physics Letters
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material which can be tungsten, tantalum or hafnium. We report TMR in different MTJs and
doi:10.1063/1.4972030
fatcat:6duhovwy7bgj5ejxr6sx6rxqeu