ln recent years, AIN attractS attentions as heat sink materia 且 s f()r discrete semiconductOr devices becausc AIN has the characteristics necessary for heat sink . But it can ' t be formed eompLex shape by net shape . So wc 衂 to cstablish mass production technology ofsintcred AIN parts having high thermal conducting and complex shape by vibrational compaction process and milliwave sintering. The f 士 equency ofvibration and the amplitUde is control] ed as fセ equency condition . The compaction is

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... evaluated by measuring sedimentation speed , compaction speed and relative density . As a resul ち compaction speed and particle filling rate arc improved by the molding method . But compaction speed is improved by minute vibration