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Single atom dispersion of silicon as advanced versatile electrode material
Silicon (Si) exhibits highest theoretical charge capacity and low discharge potential, but the associated volume expansion cannot be neglected. Here we report a single atom dispersion strategy to prepare a well distributed Si single atom based electrode material, which can effectively inhibit the volume expansion even when the storage sites are fully occupied. The dispersion of Si single atoms are achieved by bonding Si atom with acetylenic carbon atom, forming a three-dimensional diamond-likedoi:10.21203/rs.3.rs-36360/v1 fatcat:qvc36l2vabgqjnb23qmvitrvvi