Effects of Working Pressure on the Electrical and Optical Properties of GZO Thin Films Deposited on PES Substrate
PES 기판에 성장시킨 GZO 박막의 전기적 및 광학적 특성에 미치는 공정압력의 영향

Seong-Jun Kang, Yang-Hee Joung
2015 The Journal of the Korean Institute of Information and Communication Engineering  
In this study, the electrical and optical properties of GZO (Ga-doped ZnO) thin films prepared on PES substrates by RF magnetron sputtering method with various working pressures (5 to 20 mTorr) were investigated. All GZO thin films exhibited c-axis preferential growth regardless of working pressure, the GZO thin film deposited at 5 mTorr showed the most excellent crystallinity having 0.44˚ of FWHM. In AFM observations, surface roughness exhibited the lowest value of 0.20 nm in a thin film
more » ... n a thin film produced by the working pressure 5 mTorr. Figure of merits of GZO thin film deposited at 5 mTorr showed the highest value of 6652, in this case resistivity and average transmittance in the visible light region were 6.93×10 -4 Ω-cm and 81.4%, respectively. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. 키워드 : GZO 박막, 투명 전도막, PES 기판, 재료평가지수, Burstein-Moss 효과 Key word : GZO thin film, TCO, PES substrate, Figure of merit, Burstein-Moss effect Journal of the Korea Institute of Information and Communication Engineering
doi:10.6109/jkiice.2015.19.6.1393 fatcat:qycpm5tgtbbypljjr77ypuecty