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We have investigated lateral In-In pair correlations within the wetting layers of buried InAs/GaAs quantum dots imaged with cross-sectional scanning tunneling microscopy. We quantified the number of In-In pairs along the ͓110͔ direction as a function of the spacing between them. Since the number of In-In pairs exceeds that of a randomly generated distribution of In atoms, significant lateral In clustering within the wetting layers is apparent. A comparison of the experimentally determined anddoi:10.1063/1.1501760 fatcat:nvudlcsbufg3fpssafc46uo2h4