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Pure c-axis orientation Ce02 films were deposited on YSZ<100> single crystal substrates_ by pulse laser deposition (PLD) in oxygen. The optimum epitaxial growth temperature for a high level of c-axis orientation is 790 0 C, and it is related to the morphology of Ce02 grains. The more circular the shape of the grains is, the better the caxis orientation and the smoothness of Ce02 film surface are. This correlation appears to be an intrinsic feature of Ce02 growth, independent of the type ofdoi:10.1063/1.1472581 fatcat:vgsj6mm7ezbzxmvus4z4pf2sui