Relationship between orientation of CeO[sub 2] films and surface morphology

D. Q. Shi
2002 AIP Conference Proceedings  
Pure c-axis orientation Ce02 films were deposited on YSZ<100> single crystal substrates_ by pulse laser deposition (PLD) in oxygen. The optimum epitaxial growth temperature for a high level of c-axis orientation is 790 0 C, and it is related to the morphology of Ce02 grains. The more circular the shape of the grains is, the better the caxis orientation and the smoothness of Ce02 film surface are. This correlation appears to be an intrinsic feature of Ce02 growth, independent of the type of
more » ... of the type of substrate or the deposition method. Also it was found that the topography of the film surface grown by PLD reflects the morphology. . .
doi:10.1063/1.1472581 fatcat:vgsj6mm7ezbzxmvus4z4pf2sui