A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is
Photoluminescence of InGaN structures for green light emitting diodes with multiple quantum wells as an active medium was studied with spatial and spectral resolution using confocal microscopy. Bright spots of~200 nm in diameter were observed. Emission from these bright areas was up to 8 times more intense than from the rest of the sample surface and the band peak position in these areas was blueshifted in respect to the band position in the background surface of lower photoluminescencedoi:10.1088/0022-3727/44/13/135104 fatcat:jfh6pi7ne5gobab3ephn6rzh2m