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A Zn polar ZnMgO/MgO/ZnO structure with low Mg compositionZn1-xMgxOlayer (x= 0.05) grown on a-plane (11–20) sapphire by radical-source laser molecular beam epitaxy was reported. The insertion of a thin (1 nm) MgO layer between ZnMgO and ZnO layers in the ZnMgO/ZnO 2DEG structures results in an increase of 2DEG sheet density and affects electron mobility slightly. The carrier concentration reached a value as high as 1.1 × 1013 cm−2, which was confirmed byC-Vmeasurements. A high Hall mobility ofdoi:10.1155/2015/694234 fatcat:pg5hxh472zg3ppzv4twkla33ie