Structural and Electrical Properties of Cu(In,Ga)Se2Thin Films Prepared by RF Magnetron Sputtering without Selenization
셀렌화 공정을 제외한 RF 마그네트론 스퍼터링으로 제작된 Cu(In,Ga)Se2박막의 구조 및 전기적 특성

Jung-Kyu Choi, Dong-Hyun Hwang, Young-Guk Son
2013 Journal of the Korean institute of surface engineering  
A one-step route was developed to fabricate Cu(In,Ga)Se 2 (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary CuIn 0.75 Ga 0.25 Se 2 target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential
more » ... owed a preferential orientation along the (112) direction. The films deposited at 300 o C and 400 o C revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at 300 o C were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
doi:10.5695/jkise.2013.46.2.075 fatcat:7alaapsqjbhazf53dsfw6lsi4a