A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is
2016 IEEE Energy Conversion Congress and Exposition (ECCE)
With fast power semiconductor devices based on GaN and SiC becoming more common, there is a need for improved driving circuits. Transformers with smaller interwinding capacitance in the isolated gate drive power supply helps in reducing the conducted EMI emission from the power converter to auxiliary sources. This paper presents a transformer with a small volume, a low power loss and a small intercapacitance in a gate drive power supply to fast switching devices, such as GaN HEMT and SiCdoi:10.1109/ecce.2016.7855537 fatcat:kykmteyoavbgxksgvzktqrqmu4